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| MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MRF281/D The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications. * Specified Two-Tone Performance @ 1930 and 2000 MHz, 26 Volts Output Power -- 4 Watts PEP Power Gain -- 11 dB Efficiency -- 30% Intermodulation Distortion -- -29 dBc * Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 4 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * S-Parameter Characterization at High Bias Levels * Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. MRF281SR1 MRF281ZR1 2000 MHz, 4 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Freescale Semiconductor, Inc... CASE 458B-03, STYLE 1 (NI-200S) (MRF281SR1) CASE 458C-03, STYLE 1 (NI-200Z) (MRF281ZR1) MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 20 20 0.115 -65 to +150 200 Unit Vdc Vdc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 5.74 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 65 -- -- 74 -- -- -- 10 1 Vdc Adc Adc Symbol Min Typ Max Unit NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA RF Motorola, Inc. 2002 DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF281SR1 MRF281ZR1 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS continued (TC = 25C unless otherwise noted) Characteristic ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 25 mAdc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 0.1 A) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Ciss Coss Crss -- -- -- 5.5 3.3 0.17 -- -- -- pF pF pF VGS(th) VGS(q) VDS(on) 2.4 3 0.18 3.2 4.1 0.24 4 5 0.30 Vdc Vdc Vdc Symbol Min Typ Max Unit Freescale Semiconductor, Inc... Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 4 W, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA, f1 = 2000.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA, f1 = 2000.0 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA, f1 = 2000.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Test) Gps 11 12.5 -- dB 30 33 -- % IRL -- -16 -10 dB IMD -- -31 -29 dBc Gps 11 12.5 -- dB 30 -- -- % IRL -- -16 -10 dB IMD -- -31 -- dBc Gps 10.5 12 -- dB 40 44 -- % No Degradation In Output Power MRF281SR1 MRF281ZR1 2 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. Zo = 25 2.0 GHz Zin 2.0 GHz ZOL* f = 1.5 GHz Freescale Semiconductor, Inc... f = 1.5 GHz VDD = 26 V, IDQ = 25 mA, Pout = 4 W (PEP) f MHz 1500 1600 1700 1800 1900 2000 Zin Zin 3.15 - j5.3 3.1 - j3.8 3.1 - j2.3 3.1 - j0.7 3.1 + j0.9 3.1 + j2.4 ZOL* 15.5 - j13.6 14.7 - j12.5 14.0 - j11.7 13.4 - j11.0 12.8 - j10.1 12.2 - j9.2 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at given output power, voltage, IMD, bias current and frequency. Input Matching Network Device Under Test Output Matching Network Z in Z * OL Figure 1. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF281SR1 MRF281ZR1 3 Freescale Semiconductor, Inc. Table 1. Common Source S-Parameters at VDS = 26 Vdc, ID = 250 mAdc f GHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 S11 |S11| .982 .947 .912 .886 .859 .854 .841 .837 .838 .841 .840 .849 .848 .856 .858 .871 .868 .870 .872 .877 .876 .880 .882 .886 .896 .897 S21 f -28 -52 -73 -90 -103 -114 -123 -131 -138 -143 -149 -153 -158 -162 -167 -170 -173 -176 -180 178 174 171 168 165 162 158 S12 f 160 143 129 117 108 100 93 87 81 76 72 68 64 60 57 54 51 49 46 44 41 39 36 34 32 29 S22 f 73 58 45 36 28 23 18 15 12 11 12 13 18 26 36 54 69 82 95 104 109 111 114 114 115 117 dB 18.9 17.0 15.0 12.9 11.1 9.69 8.54 7.57 6.69 6.01 5.41 4.91 4.51 4.12 3.78 3.50 3.22 3.00 2.80 2.63 2.47 2.36 2.21 2.12 1.97 1.89 |S12| .008 .015 .019 .022 .022 .023 .022 .021 .019 .018 .015 .013 .012 .010 .009 .008 .009 .009 .011 .013 .015 .018 .021 .024 .027 .029 |S22| .851 .811 .770 .741 .719 .718 .709 .714 .719 .728 .742 .745 .758 .769 .786 .797 .808 .823 .828 .845 .843 .859 .858 .872 .863 .873 f -13 -25 -33 -42 -47 -51 -56 -59 -62 -64 -66 -68 -69 -70 -70 -72 -71 -72 -72 -72 -72 -71 -72 -70 -70 -69 Freescale Semiconductor, Inc... 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 MRF281SR1 MRF281ZR1 4 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. NOTES Freescale Semiconductor, Inc... MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF281SR1 MRF281ZR1 5 Freescale Semiconductor, Inc. NOTES Freescale Semiconductor, Inc... MRF281SR1 MRF281ZR1 6 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. PACKAGE DIMENSIONS ccc M TA M M B M NOTES: 1. CONTROLLING DIMENSIONS: INCHES. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. ALL DIMENSIONS ARE SYMMETRICAL ABOUT CENTERLINE UNLESS OTHERWISE NOTED. INCHES MIN MAX 0.180 0.190 0.140 0.150 0.082 0.116 0.047 0.053 0.004 0.010 0.004 0.006 0.025 0.031 0.060 0.110 0.197 0.203 0.177 0.183 0.147 0.153 0.157 0.163 --0.020 0.010 REF 0.015 REF MILLIMETERS MIN MAX 4.572 4.83 3.556 3.81 2.083 2.946 1.194 1.346 0.102 0.254 0.102 0.152 0.635 0.787 1.524 2.794 5.004 5.156 4.496 4.648 3.734 3.886 3.988 4.14 --0.508 0.254 REF 0.381 REF (INSULATOR) 1 4X R (LID) ccc M TA M B M Z DIM A B C D E F H K M N R S Z bbb ccc 2X K S (INSULATOR) ccc M T A M 2 2X B M B D bbb M M Freescale Semiconductor, Inc... TA B M M B M 3 B (FLANGE) ccc M TA N (LID) E STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE F C H A A (FLANGE) T SEATING PLANE CASE 458B-03 ISSUE D (NI-200S) (MRF281SR1) ccc M TA M M B M F Y R (LID) NOTES: 1. CONTROLLING DIMENSIONS: INCHES. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H (PACKAGE COPLANARITY): THE BOTTOM OF LEADS AND REFERENCE PLANE T MUST BE COPLANAR WITHIN DIMENSION H. INCHES MIN MAX 0.180 0.190 0.140 0.150 0.082 0.116 0.047 0.053 0.004 0.010 0.004 0.006 0.000 0.004 0.050 0.090 0.197 0.203 0.177 0.183 0.147 0.153 0.157 0.163 0.020 0.040 --- R .020 .010 REF .015 REF MILLIMETERS MIN MAX 4.572 4.830 3.556 3.810 2.083 2.946 1.194 1.346 0.102 0.254 0.102 0.152 0.000 0.102 1.270 2.286 5.004 5.156 4.496 4.648 3.734 3.886 3.988 4.140 0.508 1.016 --- R .508 0.254 REF 0.381 REF (INSULATOR) 4X Z 1 ccc M TA M B M 3 S (INSULATOR) B M ccc M TA B M (FLANGE) 2 2X B 2X D M K bbb TA ccc M B TA M M M B M N (LID) DIM A B C D E F H K M N R S Y Z bbb ccc H E C STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE A A (FLANGE) T SEATING PLANE CASE 458C-03 ISSUE D (NI-200Z) (MRF281ZR1) MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF281SR1 MRF281ZR1 7 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573 Japan. 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852-26668334 Technical Information Center: 1-800-521-6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF281SR1 MRF281ZR1 8 MRF281/D For More Information On This Product,MOTOROLA RF DEVICE DATA Go to: www.freescale.com |
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